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Campagne de collecte 15 septembre 2024 – 1 octobre 2024

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Articles (22)
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1

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

S. Brose, S. Danylyuk, L. Juschkin, C. Dittberner, K. Bergmann, J. Moers, G. Panaitov, St. Trellenkamp, P. Loosen, D. Grützmacher

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2012

2

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

J. Moers, J. Gerharz, G. Rinke, G. Mussler, St. Trellenkamp, D. Grützmacher

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 475 KB

english, 2010

3

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - Thin low-temperature gate oxides for vertical field-effect transistors

Goryll, M., Moers, J., Trellenkamp, St., Vescan, L., Marso, M., Kordos, P., Luth, H.

Année:

2002

Langue:

english

Fichier:

PDF, 121 KB

english, 2002

4

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Vertical double-gate MOSFETs

Moers, J., Trellenkamp, St., Marso, M., Hart, A.v.d., Mantl, S., Luth, H., Kordos, P.

Année:

2004

Langue:

english

Fichier:

PDF, 669 KB

english, 2004

5

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - III-nitride nano-LEDs for single photon lithography

Trellenkamp, St., Mikulics, M., Winden, A., Arango, Y. C., Moers, J., Marso, M., Grutzmacher, D., Hardtdegen, H.

Année:

2014

Langue:

english

Fichier:

PDF, 2.65 MB

english, 2014

6

Top contacts for vertical double-gate MOSFETs

J Moers, St Trellenkamp, M Goryll, M Marso, A van der Hart, S Hogg, S Mantl, P Kordoš, H Lüth

Journal:

Microelectronic Engineering

Année:

2002

Langue:

english

Fichier:

PDF, 398 KB

english, 2002

7

Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors

M Goryll, J Moers, St Trellenkamp, L Vescan, M Marso, P Kordoš, H Lüth

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2003

Langue:

english

Fichier:

PDF, 171 KB

english, 2003

8

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

St. Trellenkamp, J. Moers, A. van der Hart, P. Kordoš, H. Lüth

Journal:

Microelectronic Engineering

Année:

2003

Langue:

english

Fichier:

PDF, 350 KB

english, 2003

9

Hall effect measurements on InAs nanowires

Blömers, Ch., Grap, T., Lepsa, M. I., Moers, J., Trellenkamp, St., Grützmacher, D., Lüth, H., Schäpers, Th.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2012

10

Optimized marker definition for high overlay accuracy e-beam lithography

Moers, J., Trellenkamp, St., Grützmacher, D., Offenhäusser, A., Rienks, B.

Journal:

Microelectronic Engineering

Année:

2012

Langue:

english

Fichier:

PDF, 705 KB

english, 2012

11

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - The disposable Dot Field Effect Transistor: Process flow and overlay requirements

Moers, J., Gerharz, J., Trellenkamp, St., Hart, A.v.d., Mussler, G., Gruitzmacher, D.

Année:

2008

Langue:

english

Fichier:

PDF, 799 KB

english, 2008

12

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Phenomenological considerations of resistively switching TiO2 in nano crossbar arrays

Nauenheim, C., Kugeler, C., Trellenkamp, St., Rudiger, A., Waser, R.

Année:

2009

Langue:

english

Fichier:

PDF, 2.12 MB

english, 2009

13

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control

Trellenkamp, St., Mikulics, M., Winden, A., Adam, R., Moers, J., Marso, M., Grutzmacher, D., Hardtdegen, H.

Année:

2012

Langue:

english

Fichier:

PDF, 629 KB

english, 2012

14

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - The disposable dot FET: A strained silicon channel on top of removed SiGe

Gerharz, J., Mussler, G., Moers, J., Rinke, G., Trellenkamp, St., Grutzmacher, D.

Année:

2009

Langue:

english

Fichier:

PDF, 8.45 MB

english, 2009

15

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - Process steps for a double gate MOSFET with vertical layout

Trellenkamp, St., Moers, J., van der Hart, A., Kordos, P., Luth, H.

Année:

2002

Langue:

english

Fichier:

PDF, 153 KB

english, 2002

16

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

Kluth, S. M., Álvarez, D., Trellenkamp, St., Moers, J., Mantl, S., Kretz, J., Vandervorst, W.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2005

Langue:

english

Fichier:

PDF, 478 KB

english, 2005

17

Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M, Hardtdegen, H, Gregušová, D, Sofer, Z, Šimek, P, Trellenkamp, St, Grützmacher, D, Lüth, H, Kordoš, P, Marso, M

Journal:

Semiconductor Science and Technology

Année:

2012

Langue:

english

Fichier:

PDF, 68 KB

english, 2012

18

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Templates for highly ordered SiGe-QD arrays for single photon detection

Moers, J., Stcpina, N. P., Trellenkamp, St., Grutzmacher, D.

Année:

2014

Langue:

english

Fichier:

PDF, 474 KB

english, 2014

19

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Novel double-level-T-gate technology

Fox, A., Mikulics, M., Hardtdegen, H., Trellenkamp, St., Arango, Y. C., Grutzmacher, D., Sofer, Z., Gregusova, D., Novak, J., Kordos, P., Marso, M.

Année:

2014

Langue:

english

Fichier:

PDF, 556 KB

english, 2014

20

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - InGaN mesoscopic structures for low energy consumption nano-opto-electronics

Luth, H., Mikulics, M., Winden, A., Trellenkamp, St., Sofer, Z., Marso, M., Grutzmacher, D., Hardtdegen, H.

Année:

2016

Langue:

english

Fichier:

PDF, 476 KB

english, 2016

21

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Fabrication of UV sources for novel lithographical techniques: Development of nano-LED etching procedures

Moers, J., Mikulics, M., Marso, M., Trellenkamp, St., Sofer, Z., Grutzmacher, D., Hardtdegen, H.

Année:

2016

Fichier:

PDF, 397 KB

2016

22

Signatures of interaction-induced helical gaps in nanowire quantum point contacts

Heedt, S., Traverso Ziani, N., Crépin, F., Prost, W., Trellenkamp, St., Schubert, J., Grützmacher, D., Trauzettel, B., Schäpers, Th.

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 914 KB

english, 2017